The Origin of Local Strain in Highly Epitaxial Oxide Thin Films

نویسندگان

  • Chunrui Ma
  • Ming Liu
  • Chonglin Chen
  • Yuan Lin
  • Yanrong Li
  • J. S. Horwitz
  • Jiechao Jiang
  • E. I. Meletis
  • Qingyu Zhang
چکیده

The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ultraviolet detectors based on annealed zinc oxide thin films: epitaxial growth and physical characterizations

In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...

متن کامل

Giant flexoelectric effect through interfacial strain relaxation.

Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an ...

متن کامل

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between th...

متن کامل

Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3

Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo2O5.5+δ films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principl...

متن کامل

Growth of Epitaxial Oxide Thin Films on Graphene

The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanatio...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 3  شماره 

صفحات  -

تاریخ انتشار 2013